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Technical Specifications
Parameters and characteristics for this part
| Specification | BC857BWT1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 15 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 hFE |
| Frequency - Transition | 100 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-70, SOT-323 |
| Power - Max [Max] | 150 mW |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 650 mV |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
BC857CDW1 Series
The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.
Documents
Technical documentation and resources