Specification	HGT1S10N120BNS

Current - Collector (Ic) (Max) [Max]	35 A
Current - Collector Pulsed (Icm)	80 A
Gate Charge	100 nC
IGBT Type	NPT
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]	298 W
Supplier Device Package	TO-263 (D2PAK)
Switching Energy	800 µJ, 320 µJ
Td (on/off) @ 25°C [custom]	23 ns
Td (on/off) @ 25°C [custom]	165 ns
Test Condition	10 Ohm, 960 V, 15 V, 10 A
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

HGT1S10N120BNS Series

IGBT, 1200V, NPT

Part	Switching Energy	Mounting Type	Package / Case	Gate Charge	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Current - Collector Pulsed (Icm)	IGBT Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
ON Semiconductor HGT1S10N120BNS	320 µJ 800 µJ	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100 nC	35 A	1200 V	10 Ohm 10 A 15 V 960 V	2.7 V	298 W	23 ns	165 ns	80 A	NPT	-55 °C	150 °C	TO-263 (D2PAK)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

HGT1S10N120BNS Series

HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.