HGT1S10N120BNS Series

IGBT, 1200V, NPT

Catalog

IGBT, 1200V, NPT

Part	Switching Energy	Mounting Type	Package / Case	Gate Charge	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Current - Collector Pulsed (Icm)	IGBT Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
ON Semiconductor HGT1S10N120BNS	320 µJ 800 µJ	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100 nC	35 A	1200 V	10 Ohm 10 A 15 V 960 V	2.7 V	298 W	23 ns	165 ns	80 A	NPT	-55 °C	150 °C	TO-263 (D2PAK)

Catalog

IGBT, 1200V, NPT

Key Features

• 17A, 1200V, TC= 110°C

• Low Saturation Voltage : VCE(sat)= 2.45 V @ IC= 10A

• Typical Fall Time. . . . . . . . . .140ns at TJ= 150°C

• Short Circuit Rating

• Low Conduction Loss

Description

HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.