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Texas Instruments-TPS2052BDGNG4 Power Switches Power Switch Hi Side 2-OUT 0A 0.075mOhm 8-Pin HVSSOP EP Tube
Integrated Circuits (ICs)

LM5112MYX/NOPB

Active
Texas Instruments

3-A/7-A SINGLE CHANNEL GATE DRIVER WITH 4-V UVLO AND INPUT GROUND FOR SPLIT-SUPPLY OPERATION

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Texas Instruments-TPS2052BDGNG4 Power Switches Power Switch Hi Side 2-OUT 0A 0.075mOhm 8-Pin HVSSOP EP Tube
Integrated Circuits (ICs)

LM5112MYX/NOPB

Active
Texas Instruments

3-A/7-A SINGLE CHANNEL GATE DRIVER WITH 4-V UVLO AND INPUT GROUND FOR SPLIT-SUPPLY OPERATION

Technical Specifications

Parameters and characteristics for this part

SpecificationLM5112MYX/NOPB
Channel TypeSingle
Current - Peak Output (Source, Sink) [custom]3 A
Current - Peak Output (Source, Sink) [custom]7 A
Driven ConfigurationLow-Side
Gate TypeN-Channel MOSFET
Input TypeNon-Inverting, Inverting
Logic Voltage - VIL, VIH [custom]2.3 V
Logic Voltage - VIL, VIH [custom]0.8 V
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Package / CaseExposed Pad, 8-TSSOP, 8-MSOP
Package / Case [custom]0.118 in, 3 mm
Rise / Fall Time (Typ) [custom]12 ns
Rise / Fall Time (Typ) [custom]14 ns
Supplier Device Package8-HVSSOP
Voltage - Supply [Max]14 V
Voltage - Supply [Min]3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.52
10$ 1.36
25$ 1.29
100$ 1.10
250$ 1.03
500$ 0.90
1000$ 0.75
Digi-Reel® 1$ 1.52
10$ 1.36
25$ 1.29
100$ 1.10
250$ 1.03
500$ 0.90
1000$ 0.75
Tape & Reel (TR) 3500$ 0.64
Texas InstrumentsLARGE T&R 1$ 1.14
100$ 0.94
250$ 0.68
1000$ 0.51

Description

General part information

LM5112-Q1 Series

The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.