LM5112-Q1 Series

Automotive 7-A/3-A single channel gate driver with 4-V UVLO and dedicated input ground

Catalog

Automotive 7-A/3-A single channel gate driver with 4-V UVLO and dedicated input ground

Part	Grade	Driven Configuration	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Gate Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Voltage - Supply [Min]	Voltage - Supply [Max]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Number of Drivers	Input Type	Supplier Device Package	Channel Type	Qualification	Package / Case	Package / Case [custom]
Texas Instruments LM5112Q1SD/NOPB	Automotive	Low-Side	2.3 V	0.8 V	N-Channel MOSFET	-40 °C	125 ¯C	Surface Mount	3 A	7 A	3.5 V	14 V	12 ns	14 ns	1	Inverting Non-Inverting	6-WSON (3x3)	Single	AEC-Q100
Texas Instruments LM5112SDX/NOPB		Low-Side	2.3 V	0.8 V	N-Channel MOSFET	-40 °C	125 ¯C	Surface Mount	3 A	7 A	3.5 V	14 V	12 ns	14 ns	1	Inverting Non-Inverting	6-WSON (3x3)	Single
Texas Instruments LM5112MY/NOPB		Low-Side	2.3 V	0.8 V	N-Channel MOSFET	-40 °C	125 ¯C	Surface Mount	3 A	7 A	3.5 V	14 V	12 ns	14 ns	1	Inverting Non-Inverting	8-HVSSOP	Single		8-MSOP 8-TSSOP Exposed Pad	0.118 in 3 mm
Texas Instruments LM5112SDX		Low-Side	2.3 V	0.8 V	N-Channel MOSFET	-40 °C	125 ¯C	Surface Mount	3 A	7 A	3.5 V	14 V	12 ns	14 ns	1	Inverting Non-Inverting	6-WSON (3x3)	Single
Texas Instruments LM5112MYX/NOPB		Low-Side	2.3 V	0.8 V	N-Channel MOSFET	-40 °C	125 ¯C	Surface Mount	3 A	7 A	3.5 V	14 V	12 ns	14 ns	1	Inverting Non-Inverting	8-HVSSOP	Single		8-MSOP 8-TSSOP Exposed Pad	0.118 in 3 mm

Catalog

Automotive 7-A/3-A single channel gate driver with 4-V UVLO and dedicated input ground

Key Features

• LM5112-Q1 is Qualified for Automotive ApplicationsAEC-Q100 Grade 1 QualifiedManufactured on an Automotive Grade FlowCompound CMOS and Bipolar Outputs Reduce Output Current Variation7-A Sink and 3-A Source CurrentFast Propagation Times: 25 ns (Typical)Fast Rise and Fall Times: 14 ns or 12 nsRise or Fall With 2-nF LoadInverting and Non-Inverting Inputs Provide Either Configuration With a Single DeviceSupply Rail Undervoltage Lockout ProtectionDedicated Input Ground (IN_REF) forSplit Supply or Single Supply OperationPower Enhanced 6-Pin WSON Package(3 mm × 3 mm) or Thermally EnhancedMSOP-PowerPAD PackageOutput Swings From VCCto VEEWhich Are Negative Relative to Input GroundLM5112-Q1 is Qualified for Automotive ApplicationsAEC-Q100 Grade 1 QualifiedManufactured on an Automotive Grade FlowCompound CMOS and Bipolar Outputs Reduce Output Current Variation7-A Sink and 3-A Source CurrentFast Propagation Times: 25 ns (Typical)Fast Rise and Fall Times: 14 ns or 12 nsRise or Fall With 2-nF LoadInverting and Non-Inverting Inputs Provide Either Configuration With a Single DeviceSupply Rail Undervoltage Lockout ProtectionDedicated Input Ground (IN_REF) forSplit Supply or Single Supply OperationPower Enhanced 6-Pin WSON Package(3 mm × 3 mm) or Thermally EnhancedMSOP-PowerPAD PackageOutput Swings From VCCto VEEWhich Are Negative Relative to Input Ground

Description

The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type. The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.