Discrete Semiconductor Products

SCT018H65G3-7

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STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 20 MOHM TYP., 55 A IN AN H2PAK-7 PACKAGE

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DocumentsAN4671 +24

Discrete Semiconductor Products

SCT018H65G3-7

Active

STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 20 MOHM TYP., 55 A IN AN H2PAK-7 PACKAGE

Deep-Dive with AI

DocumentsAN4671 +24

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT018H65G3-7

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	79.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2124 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)	385 W
Rds On (Max) @ Id, Vgs [Max]	27 mOhm
Supplier Device Package	H2PAK-7
Vgs (Max) [Max]	18 V, -5 V
Vgs(th) (Max) @ Id	4.2 V

SCT018H65G3-7 Series

Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max) [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics SCT018H65G3-7	15 V 18 V	55 A	175 °C	-55 °C	2124 pF	650 V	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	4.2 V	H2PAK-7	-5 V 18 V	385 W	27 mOhm	Surface Mount	N-Channel	79.4 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 18.80

Description

General part information

SCT018H65G3-7 Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.