Discrete Semiconductor Products

PMDXB550UNEZ

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MOSFET 2N-CH 30V 0.59A 6DFN

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 0.59A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	PMDXB550UNEZ

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	590 mA
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	1.05 nC
Input Capacitance (Ciss) (Max) @ Vds	30.3 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-XFDFN Exposed Pad
Power - Max [Max]	285 mW
Rds On (Max) @ Id, Vgs	670 mOhm
Supplier Device Package	DFN1010B-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	950 mV

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Configuration	Power - Max [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Freescale Semiconductor - NXP PMDXB550UNEZ	30 V	1.05 nC	DFN1010B-6	30.3 pF	6-XFDFN Exposed Pad	MOSFET (Metal Oxide)	590 mA	Surface Mount	2 N-Channel (Dual)	285 mW	950 mV	670 mOhm	-55 °C	150 °C

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General part information

Mosfet Array 30V 590mA 285mW Surface Mount DFN1010B-6

Technical documentation and resources