30 V, dual N-channel Trench MOSFET
30 V, dual N-channel Trench MOSFET
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Power - Max [Max] | Mounting Type | Drain to Source Voltage (Vdss) | Configuration | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs(th) (Max) @ Id | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 150 °C | -55 °C | 285 mW | Surface Mount | 30 V | 2 N-Channel (Dual) | 1.05 nC | 30.3 pF | 590 mA | MOSFET (Metal Oxide) | 950 mV | DFN1010B-6 | 670 mOhm | 6-XFDFN Exposed Pad |