NTH4L040N120SC1
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 58 A, 1.2 KV, 0.04 OHM, TO-247
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NTH4L040N120SC1
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 58 A, 1.2 KV, 0.04 OHM, TO-247
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Technical Specifications
Parameters and characteristics for this part
| Specification | NTH4L040N120SC1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 58 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1762 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 319 W |
| Rds On (Max) @ Id, Vgs | 56 mOhm |
| Supplier Device Package | TO-247-4L |
| Vgs (Max) [Max] | 25 V |
| Vgs (Max) [Min] | -15 V |
| Vgs(th) (Max) @ Id | 4.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 22.29 | |
| 10 | $ 16.05 | |||
| 100 | $ 12.87 | |||
| Newark | Each | 1 | $ 18.27 | |
| 5 | $ 18.23 | |||
| 10 | $ 18.19 | |||
| 25 | $ 15.95 | |||
| 50 | $ 13.72 | |||
| 100 | $ 13.70 | |||
| 250 | $ 13.37 | |||
| ON Semiconductor | N/A | 1 | $ 11.84 | |
Description
General part information
NTH4L040N120SC1 Series
SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.
Documents
Technical documentation and resources
