STP9NK65Z
ActiveN-CHANNEL 650 V - 1 OHM - 6.4 A TO-220 ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET
STP9NK65Z
ActiveN-CHANNEL 650 V - 1 OHM - 6.4 A TO-220 ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | STP9NK65Z |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.4 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1145 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.41 | |
Description
General part information
STP9NK65Z Series
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Documents
Technical documentation and resources