Discrete Semiconductor Products

FDD8770

Obsolete

POWER FIELD-EFFECT TRANSISTOR, 3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

POWER FIELD-EFFECT TRANSISTOR, 3

Technical Specifications

Parameters and characteristics for this part

Specification	FDD8770

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	73 nC
Input Capacitance (Ciss) (Max) @ Vds	3720 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	115 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [x]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDD8770	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	2.5 V	N-Channel	115 W	73 nC	-55 °C	175 ░C	TO-252 (DPAK)	4.5 V 10 V	Surface Mount	25 V	3720 pF	4 mOhm	MOSFET (Metal Oxide)	35 A
ON Semiconductor FDD8770	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	2.5 V	N-Channel	115 W	73 nC	-55 °C	175 ░C	TO-252AA	4.5 V 10 V	Surface Mount	25 V	3720 pF	4 mOhm	MOSFET (Metal Oxide)	35 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 25 V 35A (Tc) 115W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources