FDD877 Series
Manufacturer: ON Semiconductor
Beta
⌘K
POWER FIELD-EFFECT TRANSISTOR, 3
| Part | Package / Case | Vgs (Max) | Vgs(th) (Max) @ Id | FET Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [x] | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Technology | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 20 V | 2.5 V | N-Channel | 115 W | 73 nC | -55 °C | 175 ░C | TO-252 (DPAK) | 4.5 V 10 V | Surface Mount | 25 V | 3720 pF | 4 mOhm | MOSFET (Metal Oxide) | 35 A |
ON Semiconductor | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 20 V | 2.5 V | N-Channel | 115 W | 73 nC | -55 °C | 175 ░C | TO-252AA | 4.5 V 10 V | Surface Mount | 25 V | 3720 pF | 4 mOhm | MOSFET (Metal Oxide) | 35 A |