Specification	DSB2810

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	75 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-35, DO-204AH
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-204AH (DO-35)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	20 V
Voltage - Forward (Vf) (Max) @ If	410 mV

DSB2810-Schottky-Diode Series

Diode 20V, 75mA Through Hole DO-204AH (DO-35)

Part	Voltage - Forward (Vf) (Max) @ If	Package / Case	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Speed	Speed	Current - Reverse Leakage @ Vr	Mounting Type	Supplier Device Package	Technology
Microchip Technology DSB2810	410 mV	Axial DO-204AH DO-35	75 mA	20 V	150 °C	-65 C	2 pF	Any Speed	200 mA	100 nA	Through Hole	DO-204AH (DO-35)	Schottky

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Microchip Direct	N/A	1	$ 2.61

Description

General part information

DSB2810-Schottky-Diode Series

This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications on "1N" prefixed numbers. This small diode is hermetically sealed and bonded into a DO-35 glass package.

Documents

Technical documentation and resources

LDS-0040_r4, 1N5711-12_1N6857-58_DSB2810_5712, MIL-PRF-19500-444

Data Sheets