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PG-TO247-3
Discrete Semiconductor Products

IPW65R080CFDFKSA1

Obsolete
INFINEON

MOSFET N-CH 700V 43.3A TO247-3

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PG-TO247-3
Discrete Semiconductor Products

IPW65R080CFDFKSA1

Obsolete
INFINEON

MOSFET N-CH 700V 43.3A TO247-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPW65R080CFDFKSA1
Current - Continuous Drain (Id) @ 25°C43.3 A
Drain to Source Voltage (Vdss)700 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs170 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]5030 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)391 W
Rds On (Max) @ Id, Vgs80 mOhm
Supplier Device PackagePG-TO247-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 5.48

Description

General part information

IPW65R080 Series

N-Channel 700 V 43.3A (Tc) 391W (Tc) Through Hole PG-TO247-3-1

Documents

Technical documentation and resources