Discrete Semiconductor Products

IPW65R080CFDFKSA2

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INFINEON

COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 80 MOHM; FAST RECOVERY DIODE

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Discrete Semiconductor Products

IPW65R080CFDFKSA2

Active

INFINEON

COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 80 MOHM; FAST RECOVERY DIODE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPW65R080CFDFKSA2

Current - Continuous Drain (Id) @ 25°C	43.3 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	167 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5030 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	391 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPW65R080 Series

Part	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
INFINEON IPW65R080CFDAFKSA1	MOSFET (Metal Oxide)	PG-TO247-3	650 V	10 V	43.3 A	TO-247-3	20 V	4440 pF	Automotive	-40 °C	150 °C	4.5 V	Through Hole	N-Channel	AEC-Q101	161 nC	391 W	80 mOhm
INFINEON IPW65R080CFDFKSA2	MOSFET (Metal Oxide)	PG-TO247-3	650 V	10 V	43.3 A	TO-247-3	20 V	5030 pF		-55 °C	150 °C	4.5 V	Through Hole	N-Channel			391 W	80 mOhm	167 nC
INFINEON IPW65R080CFDFKSA1	MOSFET (Metal Oxide)	PG-TO247-3-1	700 V	10 V	43.3 A	TO-247-3	20 V	5030 pF		-55 °C	150 °C	4.5 V	Through Hole	N-Channel			391 W	80 mOhm	170 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 8.26
	Tube	1	$ 10.15
		10	$ 7.00
		100	$ 5.22
		500	$ 4.84
Newark	Each	1	$ 12.22
		10	$ 11.03
		25	$ 10.40
		50	$ 9.54
		100	$ 8.65
		480	$ 7.07
		720	$ 6.65

Description

General part information

IPW65R080 Series

Replacement for650V CoolMOS™ CFD2is600V CoolMOS™ CFD7 650V CoolMOS™ CFD2is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Documents

Technical documentation and resources