Discrete Semiconductor Products

2N7002PV,115

NRND

60 V, 350 MA DUAL N-CHANNEL TRENCH MOSFET

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Documentsplastic, surface-mounted package; 6 leads; 1 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body Understanding power MOSFET data sheet parameters +14

Discrete Semiconductor Products

2N7002PV,115

NRND

Nexperia USA Inc.

60 V, 350 MA DUAL N-CHANNEL TRENCH MOSFET

Deep-Dive with AI

Documentsplastic, surface-mounted package; 6 leads; 1 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body Understanding power MOSFET data sheet parameters +14

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2N7002PV,115

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	350 mA
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	0.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	50 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Power - Max [Max]	330 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.6 Ohm
Supplier Device Package	SOT-666
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4 V

2N7002PV Series

60 V, 350 mA dual N-channel Trench MOSFET

Part	Grade	Operating Temperature	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power - Max [Max]	Configuration	FET Feature	Current - Continuous Drain (Id) @ 25°C
Nexperia USA Inc. 2N7002PV,115	Automotive	150 °C	SOT-563 SOT-666	0.8 nC	Surface Mount	MOSFET (Metal Oxide)	2.4 V	50 pF	AEC-Q101	SOT-666	1.6 Ohm	60 V	330 mW	2 N-Channel (Dual)	Logic Level Gate	350 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	20798	$ 0.44

Description

General part information

2N7002PV Series

Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.