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60 V, 350 mA dual N-channel Trench MOSFET
Description
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Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, 350 mA dual N-channel Trench MOSFET
60 V, 350 mA dual N-channel Trench MOSFET
| Part | Grade | Operating Temperature | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Technology | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Qualification | Supplier Device Package | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Power - Max [Max] | Configuration | FET Feature | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Automotive | 150 °C | SOT-563 SOT-666 | 0.8 nC | Surface Mount | MOSFET (Metal Oxide) | 2.4 V | 50 pF | AEC-Q101 | SOT-666 | 1.6 Ohm | 60 V | 330 mW | 2 N-Channel (Dual) | Logic Level Gate | 350 mA |