Discrete Semiconductor Products

BYC100W-1200PQ

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DIODE GP 1.2KV 100A TO247-2

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Discrete Semiconductor Products

Active

DIODE GP 1.2KV 100A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	BYC100W-1200PQ

Current - Average Rectified (Io)	100 A
Current - Reverse Leakage @ Vr	250 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	90 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-247-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	3.3 V

Part	Speed	Operating Temperature - Junction [Max]	Package / Case	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Technology	Supplier Device Package
WeEn Semiconductors BYC100W-1200PQ	200 mA 500 ns	175 ░C	TO-247-2	Through Hole	3.3 V	100 A	250 µA	1.2 kV	90 ns	Standard	TO-247-2

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General part information

Diode 1200 V 100A Through Hole TO-247-2

Technical documentation and resources