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SOT8000A
Discrete Semiconductor Products

PSMNR90-80ASEJ

Active
Nexperia USA Inc.

N-CHANNEL, 80 V, 0.9 MOHM, MOSFET WITH ENHANCED SOA IN CCPAK1212 PACKAGE

SOT8000A
Discrete Semiconductor Products

PSMNR90-80ASEJ

Active
Nexperia USA Inc.

N-CHANNEL, 80 V, 0.9 MOHM, MOSFET WITH ENHANCED SOA IN CCPAK1212 PACKAGE

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMNR90-80ASEJ
Current - Continuous Drain (Id) @ 25°C495 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs504 nC
Input Capacitance (Ciss) (Max) @ Vds36802 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseExposed Pad, 12-BESOP
Package / Case [x]9.4 mm
Package / Case [x]0.37 in
Power Dissipation (Max)1.55 kW
Rds On (Max) @ Id, Vgs0.9 mOhm
Supplier Device PackageCCPAK1212
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 817$ 13.44

Description

General part information

PSMNR90-80ASE Series

N-channel enhancement mode MOSFET in a CCPAK1212 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMNR90-80ASE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212).