Discrete Semiconductor Products

IPP60R210CFD7XKSA1

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INFINEON

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 210 MOHM; FAST RECOVERY DIODE

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DocumentsDatasheet Technical Data Sheet EN

Discrete Semiconductor Products

IPP60R210CFD7XKSA1

Active

INFINEON

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 210 MOHM; FAST RECOVERY DIODE

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP60R210CFD7XKSA1

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	1015 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	64 W
Rds On (Max) @ Id, Vgs	210 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPP60R210 Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs
INFINEON IPP60R210CFD7XKSA1	150 °C	-55 °C	600 V	TO-220-3	12 A	N-Channel	1015 pF	Through Hole	64 W	23 nC	10 V	PG-TO220-3	4.5 V	20 V	MOSFET (Metal Oxide)	210 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	5	$ 3.04
	Tube	1	$ 2.42
		10	$ 1.58
		100	$ 1.10
		500	$ 1.10
Newark	Each	1	$ 3.39
		10	$ 3.02
		100	$ 2.06
		500	$ 1.77
		1000	$ 1.63

Description

General part information

IPP60R210 Series

The600V CoolMOS™ CFD7is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.