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STGD3NC120H-1
Discrete Semiconductor Products

STGD3NC120H-1

Obsolete
STMicroelectronics

TRANS IGBT CHIP N 1200V 16A 3-PIN TO-251 TUBE

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STGD3NC120H-1
Discrete Semiconductor Products

STGD3NC120H-1

Obsolete
STMicroelectronics

TRANS IGBT CHIP N 1200V 16A 3-PIN TO-251 TUBE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGD3NC120H-1
Current - Collector (Ic) (Max) [Max]16 A
Current - Collector Pulsed (Icm)20 A
Gate Charge24 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-251-3 Short Leads, TO-251AA, IPAK
Power - Max [Max]105 W
Supplier Device PackageIPAK (TO-251)
Switching Energy236 µJ, 290 µJ
Td (on/off) @ 25°C118 ns, 15 ns
Test Condition10 Ohm, 15 V, 800 V, 3 A
Vce(on) (Max) @ Vge, Ic2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.57

Description

General part information

STGD3 Series

These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses.

Documents

Technical documentation and resources

No documents available