Specification	BSN20BKR

Current - Continuous Drain (Id) @ 25°C	265 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.49 nC
Input Capacitance (Ciss) (Max) @ Vds	20.2 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	310 mW
Rds On (Max) @ Id, Vgs	2.8 Ohm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.4 V

BSN20BK Series

60 V, N-channel Trench MOSFET

Part	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	FET Type	Package / Case	Power Dissipation (Max)	Supplier Device Package
Nexperia USA Inc. BSN20BKR	150 °C	-55 °C	60 V	MOSFET (Metal Oxide)	2.8 Ohm	20.2 pF	Surface Mount	265 mA	10 V	20 V	0.49 nC	1.4 V	N-Channel	SC-59 SOT-23-3 TO-236-3	310 mW	TO-236AB

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.31

Description

General part information

BSN20BK Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.