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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Technology | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | FET Type | Package / Case | Power Dissipation (Max) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 150 °C | -55 °C | 60 V | MOSFET (Metal Oxide) | 2.8 Ohm | 20.2 pF | Surface Mount | 265 mA | 10 V | 20 V | 0.49 nC | 1.4 V | N-Channel | SC-59 SOT-23-3 TO-236-3 | 310 mW | TO-236AB |