Discrete Semiconductor Products
TPW2900ENH,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 200 V, 0.029 Ω@10V, DSOP ADVANCE, U-MOSⅧ-H
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Discrete Semiconductor Products
TPW2900ENH,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 200 V, 0.029 Ω@10V, DSOP ADVANCE, U-MOSⅧ-H
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Technical Specifications
Parameters and characteristics for this part
| Specification | TPW2900ENH,L1Q |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 33 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 142 W, 800 mW |
| Rds On (Max) @ Id, Vgs | 29 mOhm |
| Supplier Device Package | 8-DSOP Advance |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.58 | |
| 10 | $ 2.34 | |||
| 100 | $ 1.64 | |||
| 500 | $ 1.34 | |||
| 1000 | $ 1.24 | |||
| 2000 | $ 1.20 | |||
| Digi-Reel® | 1 | $ 3.58 | ||
| 10 | $ 2.34 | |||
| 100 | $ 1.64 | |||
| 500 | $ 1.34 | |||
| 1000 | $ 1.24 | |||
| 2000 | $ 1.20 | |||
| N/A | 7100 | $ 3.03 | ||
| Tape & Reel (TR) | 5000 | $ 1.20 | ||
Description
General part information
TPW2900ENH Series
12V - 300V MOSFETs, N-ch MOSFET, 200 V, 0.029 Ω@10V, DSOP Advance, U-MOSⅧ-H
Documents
Technical documentation and resources