STB18NF25
ActiveAUTOMOTIVE-GRADE N-CHANNEL 250 V, 140 MOHM TYP., 17 A STRIPFET II POWER MOSFET IN A D2PAK PACKAGE
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STB18NF25
ActiveAUTOMOTIVE-GRADE N-CHANNEL 250 V, 140 MOHM TYP., 17 A STRIPFET II POWER MOSFET IN A D2PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STB18NF25 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17 A |
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 29.5 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 110 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 165 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB18NF25 Series
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.Low gate charge100% avalanche testedExceptional dv/dt capability
Documents
Technical documentation and resources