Specification	PMDXB950UPEZ

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	2.1 nC
Input Capacitance (Ciss) (Max) @ Vds	43 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-XFDFN Exposed Pad
Power - Max [Max]	265 mW
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	DFN1010B-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	950 mV

PMDXB950UPE Series

20 V, dual P-channel Trench MOSFET

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs
Nexperia USA Inc. PMDXB950UPEZ	DFN1010B-6	20 V	950 mV	MOSFET (Metal Oxide)	Surface Mount	150 °C	-55 °C	Logic Level Gate	43 pF	2 P-Channel (Dual)	1.4 Ohm	6-XFDFN Exposed Pad	500 mA	265 mW	2.1 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	10000	$ 0.08
Digikey	N/A	11740	$ 0.63

Description

General part information

PMDXB950UPE Series

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.