20 V, dual P-channel Trench MOSFET
20 V, dual P-channel Trench MOSFET
| Part | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Technology | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | FET Feature | Input Capacitance (Ciss) (Max) @ Vds | Configuration | Rds On (Max) @ Id, Vgs | Package / Case | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | DFN1010B-6 | 20 V | 950 mV | MOSFET (Metal Oxide) | Surface Mount | 150 °C | -55 °C | Logic Level Gate | 43 pF | 2 P-Channel (Dual) | 1.4 Ohm | 6-XFDFN Exposed Pad | 500 mA | 265 mW | 2.1 nC |