Discrete Semiconductor Products

IKZ50N65NH5XKSA1

Obsolete

IGBT 650V 50A CO-PACK TO-247-4

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Discrete Semiconductor Products

Obsolete

IGBT 650V 50A CO-PACK TO-247-4

Technical Specifications

Parameters and characteristics for this part

Specification	IKZ50N65NH5XKSA1

Current - Collector (Ic) (Max) [Max]	85 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	109 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-4
Power - Max [Max]	273 W
Reverse Recovery Time (trr)	46 ns
Supplier Device Package	PG-TO247-4
Switching Energy	350 µJ, 200 µJ
Td (on/off) @ 25°C	22 ns, 252 ns
Test Condition	400 V, 15 Ohm, 25 A, 15 V
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Td (on/off) @ 25°C	Mounting Type	Switching Energy	Package / Case	Gate Charge	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Test Condition	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Operating Temperature [Max]	Operating Temperature [Min]	IGBT Type
INFINEON IKZ50N65NH5XKSA1	650 V	PG-TO247-4	22 ns 252 ns	Through Hole	200 µJ 350 µJ	TO-247-4	109 nC	273 W	85 A	46 ns	15 Ohm 15 V 25 A 400 V	2.1 V	200 A	175 °C	-40 °C	Trench

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT Trench 650 V 85 A 273 W Through Hole PG-TO247-4

Technical documentation and resources