SCTWA50N120
LTBSILICON CARBIDE POWER MOSFET 1200 V, 65 A, 59 MOHM (TYP. TJ = 150 C) IN AN HIP247 LONG LEADS PACKAGE
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SCTWA50N120
LTBSILICON CARBIDE POWER MOSFET 1200 V, 65 A, 59 MOHM (TYP. TJ = 150 C) IN AN HIP247 LONG LEADS PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCTWA50N120 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 65 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1900 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -55 ░C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 318 W |
| Rds On (Max) @ Id, Vgs [Max] | 69 mOhm |
| Supplier Device Package | HiP247™ |
| Vgs (Max) [Max] | 25 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 318 | $ 28.27 | |
Description
General part information
SCTWA50N120 Series
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Documents
Technical documentation and resources