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TO-220-3
Discrete Semiconductor Products

IPP60R520C6XKSA1

Obsolete
INFINEON

TRANS MOSFET N-CH 600V 8.1A 3-PIN(3+TAB) TO-220 TUBE

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TO-220-3
Discrete Semiconductor Products

IPP60R520C6XKSA1

Obsolete
INFINEON

TRANS MOSFET N-CH 600V 8.1A 3-PIN(3+TAB) TO-220 TUBE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP60R520C6XKSA1
Current - Continuous Drain (Id) @ 25°C8.1 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]23.4 nC
Input Capacitance (Ciss) (Max) @ Vds512 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)66 W
Rds On (Max) @ Id, Vgs [Max]520 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
28550$ 0.00

Description

General part information

IPP60R Series

N-Channel 600 V 8.1A (Tc) 66W (Tc) Through Hole PG-TO220-3

Documents

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