Discrete Semiconductor Products

IPP60R074C6XKSA1

Obsolete

INFINEON

MOSFET N-CH 600V 57.7A TO220-3

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

IPP60R074C6XKSA1

Obsolete

INFINEON

MOSFET N-CH 600V 57.7A TO220-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP60R074C6XKSA1

Current - Continuous Drain (Id) @ 25°C	57.7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	138 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	480.8 W
Rds On (Max) @ Id, Vgs	74 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPP60R Series

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id [Max]
INFINEON IPP60R520C6XKSA1	PG-TO220-3	512 pF	3.5 V	N-Channel	10 V	MOSFET (Metal Oxide)	TO-220-3	150 °C	-55 °C	600 V	520 mOhm	66 W	Through Hole	23.4 nC	8.1 A	20 V
INFINEON IPP60R600CPXKSA1	PG-TO220-3		3.5 V	N-Channel	10 V	MOSFET (Metal Oxide)	TO-220-3	150 °C	-55 °C	600 V		60 W	Through Hole		6.1 A	20 V	27 nC	550 pF	600 mOhm
INFINEON IPP60R1K4C6XKSA1	PG-TO220-3	200 pF	3.5 V	N-Channel	10 V	MOSFET (Metal Oxide)	TO-220-3	150 °C	-55 °C	600 V		28.4 W	Through Hole		3.2 A	20 V	1.1 nC		1.4 Ohm
INFINEON IPP60R074C6XKSA1	PG-TO220-3		3.5 V	N-Channel	10 V	MOSFET (Metal Oxide)	TO-220-3	150 °C	-55 °C	600 V		480.8 W	Through Hole		57.7 A	20 V	138 nC		74 mOhm
INFINEON IPP60R450E6XKSA1	PG-TO220-3	620 pF	3.5 V	N-Channel	10 V	MOSFET (Metal Oxide)	TO-220-3	150 °C	-55 °C	600 V		74 W	Through Hole		9.2 A	20 V	28 nC		450 mOhm
INFINEON IPP60R600C6XKSA1	PG-TO220-3	440 pF	3.5 V	N-Channel	10 V	MOSFET (Metal Oxide)	TO-220-3	150 °C	-55 °C	600 V		63 W	Through Hole		7.3 A	20 V	20.5 nC		600 mOhm
INFINEON IPP60R600E6XKSA1	PG-TO220-3	440 pF	3.5 V	N-Channel	10 V	MOSFET (Metal Oxide)	TO-220-3	150 °C	-55 °C	600 V		63 W	Through Hole		7.3 A	20 V	20.5 nC		600 mOhm
INFINEON IPP60R230P6XKSA1	PG-TO220-3	1450 pF	4.5 V	N-Channel	10 V	MOSFET (Metal Oxide)	TO-220-3	150 °C	-55 °C	600 V			Through Hole		16.8 A	20 V	31 nC		230 mOhm	126 W
INFINEON IPP60R950C6XKSA1	PG-TO220-3		3.5 V	N-Channel	10 V	MOSFET (Metal Oxide)	TO-220-3	150 °C	-55 °C	600 V		37 W	Through Hole	13 nC	4.4 A	20 V		280 pF	950 mOhm
INFINEON IPP60R750E6XKSA1	PG-TO220-3	373 pF		N-Channel	10 V	MOSFET (Metal Oxide)	TO-220-3	150 °C	-55 °C	600 V		48 W	Through Hole	17.2 nC	5.7 A	20 V			750 mOhm		3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

IPP60R Series

N-Channel 600 V 57.7A (Tc) 480.8W (Tc) Through Hole PG-TO220-3

Documents

Technical documentation and resources