FDMS2D4N03S

Obsolete

ON Semiconductor

N-CHANNEL POWERTRENCH® SYNCFETTM 30V, 163A, 1.8MΩ

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DocumentsDatasheet Package Drawing-483AE-PQFN8 5x6, 1.27P

Discrete Semiconductor Products

FDMS2D4N03S

Obsolete

ON Semiconductor

N-CHANNEL POWERTRENCH® SYNCFETTM 30V, 163A, 1.8MΩ

Deep-Dive with AI

DocumentsDatasheet Package Drawing-483AE-PQFN8 5x6, 1.27P

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDMS2D4N03S

Current - Continuous Drain (Id) @ 25°C	163 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	88 nC
Input Capacitance (Ciss) (Max) @ Vds	6540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSMD, Flat Leads
Power Dissipation (Max)	75 W
Rds On (Max) @ Id, Vgs	1.8 mOhm
Supplier Device Package	Power56, 8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMS2D4N03S Series

N-Channel PowerTrench® SyncFETTM 30V, 163A, 1.8mΩ

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)
ON Semiconductor FDMS2D4N03S	20 V	88 nC	163 A	8-PQFN (5x6) Power56	6540 pF	N-Channel	1.8 mOhm	Surface Mount	8-PowerSMD Flat Leads	4.5 V 10 V	-55 °C	150 °C	3 V	75 W	MOSFET (Metal Oxide)	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMS2D4N03S Series

The FDMS2D4N03S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode.