FDMS2D4N03S Series

N-Channel PowerTrench® SyncFETTM 30V, 163A, 1.8mΩ

Catalog

N-Channel PowerTrench® SyncFETTM 30V, 163A, 1.8mΩ

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)
ON Semiconductor FDMS2D4N03S	20 V	88 nC	163 A	8-PQFN (5x6) Power56	6540 pF	N-Channel	1.8 mOhm	Surface Mount	8-PowerSMD Flat Leads	4.5 V 10 V	-55 °C	150 °C	3 V	75 W	MOSFET (Metal Oxide)	30 V

Catalog

N-Channel PowerTrench® SyncFETTM 30V, 163A, 1.8mΩ

Key Features

• Max rDS(on)= 1.8 mΩ at VGS= 10 V, ID= 28 A

• Max rDS(on)= 2.34 mΩ at VGS= 4.5 V, ID= 26 A

• High Performance Technology for Extremely Low rDS(on)

• SyncFETTMSchottky Body Diode

• 100% UIL Tested

• RoHS Compliant

Description

The FDMS2D4N03S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode.