Discrete Semiconductor Products

STD3N65M6

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STMicroelectronics

N-CHANNEL 650 V, 1.4 OHM TYP., 3.5 A MDMESH M6 POWER MOSFET IN A DPAK PACKAGE

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Discrete Semiconductor Products

STD3N65M6

Active

STMicroelectronics

N-CHANNEL 650 V, 1.4 OHM TYP., 3.5 A MDMESH M6 POWER MOSFET IN A DPAK PACKAGE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD3N65M6

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	0 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	45 W
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3.75 V

STD3N65 Series

N-channel 650 V, 1.4 Ohm typ., 3.5 A MDmesh M6 Power MOSFET in a DPAK package

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
STMicroelectronics STD3N65M6	150 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	150 °C	-55 °C	MOSFET (Metal Oxide)	0 V	10 V	3.5 A	N-Channel	6 nC	DPAK	25 V	45 W	3.75 V	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.47
	Tape & Reel (TR)	2500	$ 0.47
		5000	$ 0.43
		7500	$ 0.42

Description

General part information

STD3N65 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Documents

Technical documentation and resources