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SC-89-3_463C
Discrete Semiconductor Products

SI1013CX-T1-GE3

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SC-89-3_463C
Discrete Semiconductor Products

SI1013CX-T1-GE3

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI1013CX-T1-GE3
Current - Continuous Drain (Id) @ 25°C450 mA
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [custom]4.5 V
Gate Charge (Qg) (Max) @ Vgs [Max]2.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]45 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-89, SOT-490
Power Dissipation (Max)190 mW
Rds On (Max) @ Id, Vgs760 mOhm
Supplier Device PackageSC-89-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.47
10$ 0.33
100$ 0.17
500$ 0.13
1000$ 0.10
Digi-Reel® 1$ 0.47
10$ 0.33
100$ 0.17
500$ 0.13
1000$ 0.10
Tape & Reel (TR) 3000$ 0.08
6000$ 0.08
9000$ 0.07
30000$ 0.07
75000$ 0.06
150000$ 0.06

Description

General part information

SI1013 Series

P-Channel 20 V 450mA (Ta) 190mW (Ta) Surface Mount SC-89-3

Documents

Technical documentation and resources