SI1013 Series

Catalog

MOSFET P-CH 20V 450MA SC89-3

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Technology	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [custom]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI1013CX-T1-GE3	-55 °C	150 °C	190 mW	20 V	SC-89-3	450 mA	45 pF	4.5 V	Surface Mount	SC-89 SOT-490	MOSFET (Metal Oxide)	P-Channel	8 V	4.5 V	2.5 nC	760 mOhm	1 V
Vishay General Semiconductor - Diodes Division SI1013R-T1-GE3	-55 °C	150 °C		20 V	SC-75A	350 mA		1.8 V 4.5 V	Surface Mount	SC-75 SOT-416	MOSFET (Metal Oxide)	P-Channel	6 V		1.5 nC		450 mV	150 mW	1.2 Ohm	4.5 V
Vishay General Semiconductor - Diodes Division SI1013X-T1-GE3	-55 °C	150 °C		20 V	SC-89-3	350 mA		1.8 V 4.5 V	Surface Mount	SC-89 SOT-490	MOSFET (Metal Oxide)	P-Channel	6 V		1.5 nC		450 mV	250 mW	1.2 Ohm	4.5 V