Specification	2N7002AKM-QYL

Current - Continuous Drain (Id) @ 25°C	350 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	315 pC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	9.2 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	3.1 W, 710 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	SOT-883
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

2N7002AKM-Q Series

60 V, N-channel Trench MOSFET

Part	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Supplier Device Package	Grade	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Qualification	FET Type	Mounting Type	Package / Case
Nexperia USA Inc. 2N7002AKM-QYL	2.6 V	MOSFET (Metal Oxide)	60 V	350 mA	315 pC	5 V 10 V	20 V	9.2 pF	3.1 W 710 mW	SOT-883	Automotive	150 °C	-55 °C	3 Ohm	AEC-Q101	N-Channel	Surface Mount	SC-101 SOT-883

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.04

Description

General part information

2N7002AKM-Q Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.