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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Vgs(th) (Max) @ Id | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Supplier Device Package | Grade | Operating Temperature [Max] | Operating Temperature [Min] | Rds On (Max) @ Id, Vgs | Qualification | FET Type | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 2.6 V | MOSFET (Metal Oxide) | 60 V | 350 mA | 315 pC | 5 V 10 V | 20 V | 9.2 pF | 3.1 W 710 mW | SOT-883 | Automotive | 150 °C | -55 °C | 3 Ohm | AEC-Q101 | N-Channel | Surface Mount | SC-101 SOT-883 |