Discrete Semiconductor Products

2N3417 APP TIN/LEAD

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BIPOLAR TRANSISTORS - BJT NPN 50VCBO 50VCEO 5.0VEBO 500MA 625MW

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT NPN 50VCBO 50VCEO 5.0VEBO 500MA 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	2N3417 APP TIN/LEAD

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	180
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]
Central Semiconductor Corp 2N3417 TRA TIN/LEAD	Through Hole	180	100 nA	500 mA	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	NPN	300 mV	TO-92	625 mW	50 V	150 °C	-65 °C
Central Semiconductor Corp 2N3417 APP TIN/LEAD	Through Hole	180	100 nA	500 mA	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	NPN	300 mV	TO-92	625 mW	50 V	150 °C	-65 °C
Central Semiconductor Corp 2N3417 APP PBFREE	Through Hole	180	100 nA	500 mA	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	NPN	300 mV	TO-92	625 mW	50 V	150 °C	-65 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.43
Mouser	N/A	2000	$ 0.39

General part information

BIPOLAR TRANSISTORS - BJT NPN 50VCBO 50VCEO 5.0VEBO 500MA 625MW

Technical documentation and resources

No documents available