2N3417 Series

Catalog

BIPOLAR TRANSISTORS - BJT NPN 50VCBO 50VCEO 5.0VEBO 500MA 625MW

Part	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]
Central Semiconductor Corp 2N3417 TRA TIN/LEAD	Through Hole	180	100 nA	500 mA	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	NPN	300 mV	TO-92	625 mW	50 V	150 °C	-65 °C
Central Semiconductor Corp 2N3417 APP TIN/LEAD	Through Hole	180	100 nA	500 mA	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	NPN	300 mV	TO-92	625 mW	50 V	150 °C	-65 °C
Central Semiconductor Corp 2N3417 APP PBFREE	Through Hole	180	100 nA	500 mA	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	NPN	300 mV	TO-92	625 mW	50 V	150 °C	-65 °C