Specification	IPB50R140CPATMA1

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	550 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	64 nC
Input Capacitance (Ciss) (Max) @ Vds	2540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	192 W
Rds On (Max) @ Id, Vgs	140 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

CoolMOS CE Series

Part	Supplier Device Package	Power Dissipation (Max)	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id [Max]
INFINEON IPA50R500CEXKSA2	PG-TO220-3-FP	28 W	N-Channel	MOSFET (Metal Oxide)	18.7 nC	-40 °C	150 °C	20 V	500 mOhm	3.5 V	500 V	13 V	433 pF	Through Hole	TO-220-3 Full Pack	5.4 A
INFINEON IPB50R140CPATMA1	PG-TO263-3-2	192 W	N-Channel	MOSFET (Metal Oxide)		-55 °C	150 °C	20 V	140 mOhm	3.5 V	550 V	10 V		Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	23 A	2540 pF	64 nC
INFINEON IPD50R800CEAUMA1	PG-TO252-2	60 W	N-Channel	MOSFET (Metal Oxide)	12.4 nC	-55 °C	150 °C	20 V	800 mOhm	3.5 V	500 V	13 V	280 pF	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	7.6 A
INFINEON IPAN65R650CEXKSA1	PG-TO220-FP	28 W	N-Channel	MOSFET (Metal Oxide)		-40 °C	150 °C	20 V	650 mOhm	3.5 V	650 V	10 V		Through Hole	TO-220-3 Full Pack	10.1 A	440 pF	23 nC
INFINEON IPA50R380CE	PG-TO220-FP	29.2 W	N-Channel	MOSFET (Metal Oxide)		-55 °C	150 °C	20 V	380 mOhm	3.5 V	500 V	13 V	584 pF	Through Hole	TO-220-3 Full Pack	9.9 A		24.8 nC
INFINEON IPI60R199CPXKSA2		139 W	N-Channel	MOSFET (Metal Oxide)		-55 °C	150 °C	20 V			600 V	10 V		Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	16 A	1520 pF	43 nC	199 mOhm	3.5 V
INFINEON IPB60R600CP	PG-TO263-3-2	60 W	N-Channel	MOSFET (Metal Oxide)		-55 °C	150 °C	20 V	600 mOhm	3.5 V	600 V	10 V	550 pF	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	6.1 A		27 nC
INFINEON IPW50R250CPFKSA1	PG-TO247-3-1	114 W	N-Channel	MOSFET (Metal Oxide)		-55 °C	150 °C	20 V	250 mOhm	3.5 V	500 V	10 V	1420 pF	Through Hole	TO-247-3	13 A		36 nC
INFINEON IPD65R400CEAUMA1	PG-TO252-3	118 W	N-Channel	MOSFET (Metal Oxide)		-55 °C	150 °C	20 V	400 mOhm	3.5 V	650 V	10 V	710 pF	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	15.1 A		39 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 5.99
	Digi-Reel®	1	$ 5.99
	N/A	490	$ 4.59
	Tape & Reel (TR)	1000	$ 2.31
Mouser	N/A	1	$ 3.80
		10	$ 2.93
		100	$ 2.37
		500	$ 2.10
		1000	$ 1.80
		2000	$ 1.69
Newark	Each (Supplied on Cut Tape)	1	$ 4.52
		10	$ 3.17
		25	$ 2.97
		50	$ 2.64
		100	$ 2.30
		250	$ 2.26
		500	$ 1.90
		1000	$ 1.81

Description

General part information

CoolMOS CE Series

CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.

Documents

Technical documentation and resources

IPB50R140CPATMA1

Deep-Dive with AI

IPB50R140CPATMA1

Deep-Dive with AI

Technical Specifications

CoolMOS CE Series

Pricing

Description

CoolMOS CE Series

Documents

MOSFET some key facts about avalanche

IPB50R140CP

IPB50R140CP

MOSFET CoolMOS™ benefits in hard and soft switching SMPS topologies

MOSFET CoolMOS™ best-in-class RDSon per package products

FIT Report - IPB50R140CP

Technical Data Sheet EN

Technical Data Sheet EN

CoolMOS CE Series