Discrete Semiconductor Products

IPD50R800CEAUMA1

LTB

INFINEON

MOSFETS N

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Discrete Semiconductor Products

IPD50R800CEAUMA1

LTB

INFINEON

MOSFETS N

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD50R800CEAUMA1

Current - Continuous Drain (Id) @ 25°C	7.6 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	13 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	280 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	800 mOhm
Supplier Device Package	PG-TO252-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

CoolMOS CE Series

Part	Supplier Device Package	Power Dissipation (Max)	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id [Max]
INFINEON IPA50R500CEXKSA2	PG-TO220-3-FP	28 W	N-Channel	MOSFET (Metal Oxide)	18.7 nC	-40 °C	150 °C	20 V	500 mOhm	3.5 V	500 V	13 V	433 pF	Through Hole	TO-220-3 Full Pack	5.4 A
INFINEON IPB50R140CPATMA1	PG-TO263-3-2	192 W	N-Channel	MOSFET (Metal Oxide)		-55 °C	150 °C	20 V	140 mOhm	3.5 V	550 V	10 V		Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	23 A	2540 pF	64 nC
INFINEON IPD50R800CEAUMA1	PG-TO252-2	60 W	N-Channel	MOSFET (Metal Oxide)	12.4 nC	-55 °C	150 °C	20 V	800 mOhm	3.5 V	500 V	13 V	280 pF	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	7.6 A
INFINEON IPAN65R650CEXKSA1	PG-TO220-FP	28 W	N-Channel	MOSFET (Metal Oxide)		-40 °C	150 °C	20 V	650 mOhm	3.5 V	650 V	10 V		Through Hole	TO-220-3 Full Pack	10.1 A	440 pF	23 nC
INFINEON IPA50R380CE	PG-TO220-FP	29.2 W	N-Channel	MOSFET (Metal Oxide)		-55 °C	150 °C	20 V	380 mOhm	3.5 V	500 V	13 V	584 pF	Through Hole	TO-220-3 Full Pack	9.9 A		24.8 nC
INFINEON IPI60R199CPXKSA2		139 W	N-Channel	MOSFET (Metal Oxide)		-55 °C	150 °C	20 V			600 V	10 V		Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	16 A	1520 pF	43 nC	199 mOhm	3.5 V
INFINEON IPB60R600CP	PG-TO263-3-2	60 W	N-Channel	MOSFET (Metal Oxide)		-55 °C	150 °C	20 V	600 mOhm	3.5 V	600 V	10 V	550 pF	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	6.1 A		27 nC
INFINEON IPW50R250CPFKSA1	PG-TO247-3-1	114 W	N-Channel	MOSFET (Metal Oxide)		-55 °C	150 °C	20 V	250 mOhm	3.5 V	500 V	10 V	1420 pF	Through Hole	TO-247-3	13 A		36 nC
INFINEON IPD65R400CEAUMA1	PG-TO252-3	118 W	N-Channel	MOSFET (Metal Oxide)		-55 °C	150 °C	20 V	400 mOhm	3.5 V	650 V	10 V	710 pF	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	15.1 A		39 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.12
	Tape & Reel (TR)	2500	$ 0.29
		5000	$ 0.27
		7500	$ 0.26
		12500	$ 0.25
Mouser	N/A	1	$ 0.81
		10	$ 0.58
		100	$ 0.39
		500	$ 0.33
		1000	$ 0.28
		2500	$ 0.25
		5000	$ 0.24

Description

General part information

CoolMOS CE Series

N-Channel 500 V 7.6A (Tc) 60W (Tc) Surface Mount PG-TO252-2

Documents

Technical documentation and resources