Discrete Semiconductor Products

IRFBE20

Obsolete

MOSFET N-CH 800V 1.8A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 800V 1.8A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRFBE20

Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	530 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	54 W
Rds On (Max) @ Id, Vgs	6.5 Ohm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division IRFBE20	MOSFET (Metal Oxide)	Through Hole	530 pF	10 V	1.8 A	TO-220AB	6.5 Ohm	20 V	4 V	TO-220-3	-55 °C	150 °C	54 W	N-Channel	38 nC	800 V
Vishay General Semiconductor - Diodes Division IRFBE20S	MOSFET (Metal Oxide)	Surface Mount	530 pF	10 V	1.8 A	TO-263 (D2PAK)	6.5 Ohm	20 V	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	150 °C		N-Channel	38 nC	800 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 1.8A (Tc) 54W (Tc) Through Hole TO-220AB

Technical documentation and resources