IRFBE20 Series

Catalog

MOSFET N-CH 800V 1.8A TO220AB

Part	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division IRFBE20	MOSFET (Metal Oxide)	Through Hole	530 pF	10 V	1.8 A	TO-220AB	6.5 Ohm	20 V	4 V	TO-220-3	-55 °C	150 °C	54 W	N-Channel	38 nC	800 V
Vishay General Semiconductor - Diodes Division IRFBE20S	MOSFET (Metal Oxide)	Surface Mount	530 pF	10 V	1.8 A	TO-263 (D2PAK)	6.5 Ohm	20 V	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	150 °C		N-Channel	38 nC	800 V