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2N3792
Discrete Semiconductor Products

2N6286

Active
Microchip Technology

80V 20A 175W PNP POWER BJT THT TO-3 ROHS COMPLIANT: YES

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2N3792
Discrete Semiconductor Products

2N6286

Active
Microchip Technology

80V 20A 175W PNP POWER BJT THT TO-3 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N6286
Current - Collector (Ic) (Max)20 A
Current - Collector Cutoff (Max) [Max]1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce1500 hFE
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-65 °C
Package / CaseTO-3, TO-204AA
Power - Max [Max]175 W
Supplier Device PackageTO-204AA (TO-3)
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic3 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 61.78
Microchip DirectN/A 1$ 66.53
NewarkEach 100$ 61.78
500$ 59.40

Description

General part information

2N6286-Darlington Series

This specification covers the performance requirements for PNP, Darlington, power, 2N6286 and 2N6287 transistors for use in particular power-switching applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500/505. The device package outlines are as follows: similar to TO-3 for all encapsulated device types.

Documents

Technical documentation and resources