Discrete Semiconductor Products

STD5N65M6

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MOSFET N-CH 650V DPAK

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Discrete Semiconductor Products

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MOSFET N-CH 650V DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STD5N65M6

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	0 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	170 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	1.3 Ohm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3.75 V

Part	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
STMicroelectronics STD5N65M6	0 V	10 V	4 A	DPAK	3.75 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	45 W	Surface Mount	650 V	150 °C	-55 °C	170 pF	MOSFET (Metal Oxide)	25 V	N-Channel	5.1 nC	1.3 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 650 V 4A (Tc) 45W (Tc) Surface Mount DPAK

Technical documentation and resources

No documents available