Discrete Semiconductor Products

BYV79E-200,127

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DIODE GEN PURP 200V 14A TO220AC

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Discrete Semiconductor Products

Active

DIODE GEN PURP 200V 14A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	BYV79E-200,127

Current - Average Rectified (Io)	14 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	30 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	14 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.05 V

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If	Technology	Package / Case	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed	Operating Temperature - Junction [Max]	Mounting Type	Supplier Device Package	Reverse Recovery Time (trr)
WeEn Semiconductors BYV79E-200,127	1.05 V	14 A	Standard	TO-220-2	14 A	200 V	50 µA	200 mA 500 ns	150 °C	Through Hole	TO-220AC	30 ns

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General part information

Diode 200 V 14A Through Hole TO-220AC

Technical documentation and resources

No documents available