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PHPT61006PYX

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PHPT61006PY - 100 V, 6 A PNP HIGH POWER BIPOLAR TRANSISTOR@EN-US SOIC 4-PIN

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Discrete Semiconductor Products

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PHPT61006PY - 100 V, 6 A PNP HIGH POWER BIPOLAR TRANSISTOR@EN-US SOIC 4-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PHPT61006PYX

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	170
Frequency - Transition	116 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SOT-669, SC-100
Power - Max	1.3 W
Qualification	AEC-Q100
Supplier Device Package	Power-SO8, LFPAK56
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic [Max]	130 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Supplier Device Package	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic [Max]	Operating Temperature	Package / Case	Qualification	Grade	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic
Freescale Semiconductor - NXP PHPT61006PYX	Surface Mount	100 V	PNP	LFPAK56 Power-SO8	1.3 W	170	130 mV	175 °C	SC-100 SOT-669	AEC-Q100	Automotive	100 nA	116 MHz
Freescale Semiconductor - NXP PHPT61006NYX	Surface Mount	100 V	NPN	LFPAK56 Power-SO8	1.3 W	140		175 °C	SC-100 SOT-669	AEC-Q100	Automotive	100 nA	170 MHz	340 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 100 V 6 A 116MHz 1.3 W Surface Mount LFPAK56, Power-SO8

Technical documentation and resources