
Catalog
100 V, 6 A PNP high power bipolar transistor
Description
AI
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

100 V, 6 A PNP high power bipolar transistor
100 V, 6 A PNP high power bipolar transistor
| Part | Vce Saturation (Max) @ Ib, Ic | Frequency - Transition | Operating Temperature | Package / Case | Grade | Transistor Type | Power - Max [Max] | Mounting Type | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 130 mV | 116 MHz | 175 °C | SC-100 SOT-669 | Automotive | PNP | 1.3 W | Surface Mount | 100 nA | LFPAK56 Power-SO8 | 100 V | 170 | AEC-Q100 |
Nexperia USA Inc. | 340 mV | 170 MHz | 175 °C | SC-100 SOT-669 | Automotive | NPN | 1.3 W | Surface Mount | 100 nA | LFPAK56 Power-SO8 | 100 V | 140 | AEC-Q100 |