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TJ15S06M3L - High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -60 V, -15 A, 0.05 Ω@10V, DPAK+
Discrete Semiconductor Products

TK7S10N1Z,LXHQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 100 V, 7.0 A, 0.048 Ω@10V, DPAK+

TJ15S06M3L - High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -60 V, -15 A, 0.05 Ω@10V, DPAK+
Discrete Semiconductor Products

TK7S10N1Z,LXHQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 100 V, 7.0 A, 0.048 Ω@10V, DPAK+

Technical Specifications

Parameters and characteristics for this part

SpecificationTK7S10N1Z,LXHQ
Current - Continuous Drain (Id) @ 25°C7 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.1 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]470 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)50 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs48 mOhm
Supplier Device PackageDPAK+
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.37
10$ 0.87
100$ 0.57
500$ 0.45
1000$ 0.41
Digi-Reel® 1$ 1.37
10$ 0.87
100$ 0.57
500$ 0.45
1000$ 0.41
N/A 2748$ 1.41
Tape & Reel (TR) 2000$ 0.37
4000$ 0.35
6000$ 0.33
10000$ 0.32

Description

General part information

TK7S10 Series

N-Channel 100 V 7A (Ta) 50W (Tc) Surface Mount DPAK+

Documents

Technical documentation and resources

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2

Application Note

Selection Guide MOSFETs 2025 Rev1.0

Catalog

Motor Control (Vacuum Cleaners)

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes

Application Note

RC Snubbers for Step-Down Converters

Application Note

Simplified CFD Model Application Note

Application Note

Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes

Application Note

TK7S10N1Z Data sheet/English

Data sheet

TK7S10N1Z Data sheet/Japanese

Data sheet

MOSFET Gate Drive Circuit: Power MOSFET Application Notes

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode

Application Note

Calculating the Temperature of Discrete Semiconductor Devices

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes

Application Note

MOSFET SPICE model grade

Application Note

Resonant Circuits and Soft Switching

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes

Application Note

MOSFET Secondary Breakdown

Application Note

Hints and Tips for Thermal Design part3

Application Note

Electrical Characteristics: Power MOSFET Application Notes

Application Note

Avalanche energy calculation

Application Note

Derating of the MOSFET Safe Operating Area

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes

Application Note

MOSFET Self-Turn-On Phenomenon

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1

Application Note

Maximum Ratings: Power MOSFET Application Notes

Application Note

Structures and Characteristics: Power MOSFET Application Notes

Application Note